In a Press Release earlier today, Samsung announced that it has developed the industry's first DDR5 DRAM built on 12nm fabrication/process technology. And that its mass production will start in 2023.
This breakthrough was possible because of the use of a new high-κ material that increases cell capacitance, proprietary design technology that improves critical circuit characteristics, and an advanced multi-layer extreme ultraviolet (EUV) lithography - the industry’s highest die density, which enables a 20 percent gain in wafer productivity.
According to Jooyoung Lee, Executive Vice President of DRAM Products and Technology at Samsung Electronics, “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM. With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers, and AI-driven systems.”
The DDR5 DRAM is said to have been optimized and validated on 'Zen' platforms according to Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. And has also completed product evaluation for compatibility with AMD.
This DDR5 DRAM has a data transmission speed of up to 7.2Gbps, equivalent to processing two 30GB 4K movies in just one second. It is also said to be more power efficient than the previous generation with about 23 percent better performance.
Source: Samsung Newsroom